byv26a, byv26b, byv26c, byv26d, BYV26E www.vishay.com vishay semiconductors rev. 1.8, 04-sep-12 1 document number: 86040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultra-fast avalanche sinterglass diode mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? very low switching losses ? low reverse current ? high reverse voltage ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? switched mode power supplies ? high-frequency inverter circuits ? ? ? ? 949539 ordering information (example) device name ordering code tape d units minimum order quantity BYV26E BYV26E-tr 5000 per 10" tape and reel 25 000 BYV26E BYV26E-tap 5000 per ammopack 25 000 parts table part type differentiation package byv26a v r = 200 v; i f(av) = 1 a sod-57 byv26b v r = 400 v; i f(av) = 1 a sod-57 byv26c v r = 600 v; i f(av) = 1 a sod-57 byv26d v r = 800 v; i f(av) = 1 a sod-57 BYV26E v r = 1000 v; i f(av) = 1 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byv26a v r = v rrm 200 v byv26b v r = v rrm 400 v byv26c v r = v rrm 600 v byv26d v r = v rrm 800 v BYV26E v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 30 a average forward current i f(av) 1a non repetitive reverse avalanche energy i (br)r = 1 a, inductive load e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w
byv26a, byv26b, byv26c, byv26d, BYV26E www.vishay.com vishay semiconductors rev. 1.8, 04-sep-12 2 document number: 86040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - max. reverse power dissipation vs. junction temperature fig. 2 - max. reverse curr ent vs. junction temperature fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a v f --2.5v i f = 1 a, t j = 175 c v f --1.3v reverse current v r = v rrm i r --5a v r = v rrm , t j = 150 c i r - - 100 a reverse breakdown voltage i r = 100 a byv26a v (br)r 300 - - v byv26b v (br)r 500 - - v byv26c v (br)r 700 - - v byv26d v (br)r 900 - - v BYV26E v (br)r 1100 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a byv26a t rr - - 30 ns byv26b t rr - - 30 ns byv26c t rr - - 30 ns byv26d t rr - - 75 ns BYV26E t rr - - 75 ns 04080120160 0 100 200 300 400 600 p r - max. rever s e power di ss ipation (mw) t j - junction temperature (c) 200 959728 500 v r = v rrm 200 v 1000 v 400 v 600 v 800 v r thja = 45 k/w r thja = 100 k/w 04080120160 200 959729 1 10 100 1000 i r - rever s e current (a) t j - junction temperature (c) v r = v rrm 0.1 04080120160 0 0.2 0.4 0.6 0.8 1.2 t amb - ambient temperature (c) 200 959730 1.0 r thja = 45 k/w i fav - average forward current (a) r thja = 100 k/w 0.001 0.01 0.1 1 10 959731 i f - forward current (a) v f - forward voltage (v) t j = 175 c 1 0234567 t j = 25 c
byv26a, byv26b, byv26c, byv26d, BYV26E www.vishay.com vishay semiconductors rev. 1.8, 04-sep-12 3 document number: 86040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - diode capacitance vs. reverse voltage fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 5 10 15 20 25 30 35 40 16380 f = 1 mhz byv26c 0.1 1 10 100 v r - rever s e voltage (v) c d - diodecapacitance (pf) 16381 f = 1 mhz BYV26E 0 5 10 15 20 25 30 35 40 0.1 1 10 100 v r - rever s e voltage (v) c d - diode capacitance (pf) 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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